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1N65G
Discrete Semiconductor Products

1N65G

Active
UMW

SOT-223 N-CHANNEL POWER MOSFET

1N65G
Discrete Semiconductor Products

1N65G

Active
UMW

SOT-223 N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification1N65G
Current - Continuous Drain (Id) (Tj)1 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)4.8 nC
Input Capacitance (Ciss) (Max)150 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223
Rds On (Max)11 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 0.48<4d
10$ 0.34
25$ 0.30
100$ 0.26
250$ 0.24
500$ 0.23
1000$ 0.22
Tape & Reel (TR) 2500$ 0.21<4d
5000$ 0.20
7500$ 0.20
12500$ 0.20
17500$ 0.20
25000$ 0.19

CAD

3D models and CAD resources for this part

Description

General part information

1N65G

N-Channel 650 V 1A (Tj) Surface Mount SOT-223

Documents

Technical documentation and resources