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GD25B16EEIGR
Integrated Circuits (ICs)

GD25B16EEIGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

GD25B16EEIGR
Integrated Circuits (ICs)

GD25B16EEIGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

Technical Specifications

Parameters and characteristics for this part

SpecificationGD25B16EEIGR
Access Time7 ns
Clock Frequency133 MHz
Memory Depth2 M
Memory FormatFLASH
Memory Interface (Type)SPI - Quad I/O
Memory Size16 Mb
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case8-XFDFN Exposed Pad
Package Length3 mm
Package Name8-USON
Package Width2 mm
TechnologyFLASH - NOR (SLC)
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page2 ms
Write Cycle Time - Word70 µs

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 0.90<5d
10$ 0.85
25$ 0.82
50$ 0.81
100$ 0.79
250$ 0.77
500$ 0.75
1000$ 0.73
Tape & Reel (TR) 3000$ 0.70<5d
6000$ 0.68
9000$ 0.67
15000$ 0.66

CAD

3D models and CAD resources for this part

Description

General part information

GD25B16EEIGR

FLASH - NOR (SLC) Memory IC 16Mbit SPI - Quad I/O 133 MHz 7 ns 8-USON (3x2)

Documents

Technical documentation and resources