Discrete Semiconductor Products
AS1M040120T
ActiveANBON SEMICONDUCTOR (INT'L) LIMITED
N-CHANNEL SILICON CARBIDE POWER
Discrete Semiconductor Products
AS1M040120T
ActiveANBON SEMICONDUCTOR (INT'L) LIMITED
N-CHANNEL SILICON CARBIDE POWER
Technical Specifications
Parameters and characteristics for this part
| Specification | AS1M040120T |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 60 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 142 nC |
| Input Capacitance (Ciss) (Max) | 2946 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4 |
| Power Dissipation (Max) | 330 W |
| Rds On (Max) | 55 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 24.30 | <4d |
| 30 | $ 15.44 | |||
| 120 | $ 13.50 | |||
| 510 | $ 13.28 | |||
CAD
3D models and CAD resources for this part
Description
General part information
AS1M040120T
N-Channel 1200 V 60A (Tc) 330W (Tc) Through Hole TO-247-4
Documents
Technical documentation and resources