Integrated Circuits (ICs)
K4B4G1646E-BYK000
ActiveSamsung Semiconductor, Inc.
DDR3-1600 4GB (256MX16)1.25NS CL
Integrated Circuits (ICs)
K4B4G1646E-BYK000
ActiveSamsung Semiconductor, Inc.
DDR3-1600 4GB (256MX16)1.25NS CL
Technical Specifications
Parameters and characteristics for this part
| Specification | K4B4G1646E-BYK000 |
|---|---|
| Clock Frequency | 800 MHz |
| Memory Depth | 256 M |
| Memory Format | DRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 4 Gbit |
| Memory Type | Volatile |
| Memory Width | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 95 °C |
| Operating Temperature (Min) | 0 °C |
| Package / Case | 96-TFBGA |
| Voltage - Supply | 1.35 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
3D models and CAD resources for this part
Description
General part information
K4B4G1646E-BYK000
Memory IC 4Gbit Parallel 800 MHz
Documents
Technical documentation and resources
No documents available