Discrete Semiconductor Products
V8PM103S-M3/I
ActiveMitsubishi Electric Europe B.V.
DIODE SCHOTTKY 100V 3.7A TO277A
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsV8PM103S-M3/I | Datasheet
Discrete Semiconductor Products
V8PM103S-M3/I
ActiveMitsubishi Electric Europe B.V.
DIODE SCHOTTKY 100V 3.7A TO277A
Deep-Dive with AI
DocumentsV8PM103S-M3/I | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | V8PM103S-M3/I |
|---|---|
| Capacitance @ Vr, F | 1000 pF |
| Current - Average Rectified (Io) | 3.7 A |
| Current - Reverse Leakage @ Vr | 150 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-277A (SMPC) |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 730 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 6490 | $ 0.67 | |
Description
General part information
V8PM103S-M3/I
DIODE SCHOTTKY 100V 3.7A TO277A
Documents
Technical documentation and resources