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EDB1316BDBH-1DAUT-F-R TR
Integrated Circuits (ICs)

EDB1316BDBH-1DAUT-F-R TR

Active
Micron Technology Inc.

IC DRAM 1GBIT PAR 134VFBGA

EDB1316BDBH-1DAUT-F-R TR
Integrated Circuits (ICs)

EDB1316BDBH-1DAUT-F-R TR

Active
Micron Technology Inc.

IC DRAM 1GBIT PAR 134VFBGA

Technical Specifications

Parameters and characteristics for this part

SpecificationEDB1316BDBH-1DAUT-F-R TR
Clock Frequency533 MHz
Memory Depth64 M
Memory FormatDRAM
Memory Interface (Type)Parallel
Memory Size1 Gbit
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package / Case134-VFBGA
Package Length10 mm
Package Name134-VFBGA
Package Width11.5 mm
TechnologySDRAM - Mobile LPDDR2
Voltage - Supply (Maximum)1.95 V
Voltage - Supply (Minimum)1.14 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated

CAD

3D models and CAD resources for this part

Description

General part information

EDB1316BDBH-1DAUT-F-R TR

IC DRAM 1GBIT PAR 134VFBGA

Documents

Technical documentation and resources