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SDS065J008D4-CSARH
Discrete Semiconductor Products

SDS065J008D4-CSARH

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Sanan Power Semiconductor

DIODE SIL CARB 650V 24A TO2522L

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SDS065J008D4-CSARH
Discrete Semiconductor Products

SDS065J008D4-CSARH

Active
Sanan Power Semiconductor

DIODE SIL CARB 650V 24A TO2522L

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSDS065J008D4-CSARH
Capacitance @ Vr, F462 pF
Current - Average Rectified (Io)24 A
Current - Reverse Leakage @ Vr48 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageTO-252-2L
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.98

Description

General part information

SDS065J008D4-CSARH

DIODE SIL CARB 650V 24A TO2522L

Documents

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