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ADS065J016G3-ASATH
Discrete Semiconductor Products

ADS065J016G3-ASATH

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Sanan Power Semiconductor

DIODE ARR SIC 650V 25A TO247-3L

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ADS065J016G3-ASATH
Discrete Semiconductor Products

ADS065J016G3-ASATH

Active
Sanan Power Semiconductor

DIODE ARR SIC 650V 25A TO247-3L

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationADS065J016G3-ASATH
Current - Average Rectified (Io) (per Diode)25 A
Current - Reverse Leakage24 µA
Diode ConfigurationCommon Cathode
Diode Pair Count1 pair
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247-3L
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 100$ 5.031m+

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Description

General part information

ADS065J016G3-ASATH

DIODE ARR SIC 650V 25A TO247-3L

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