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ADS065J016G3-ASATH
Discrete Semiconductor Products

ADS065J016G3-ASATH

Active
Sanan Power Semiconductor

DIODE ARR SIC 650V 25A TO247-3L

ADS065J016G3-ASATH
Discrete Semiconductor Products

ADS065J016G3-ASATH

Active
Sanan Power Semiconductor

DIODE ARR SIC 650V 25A TO247-3L

Technical Specifications

Parameters and characteristics for this part

SpecificationADS065J016G3-ASATH
Current - Average Rectified (Io) (per Diode)25 A
Current - Reverse Leakage24 µA
Diode ConfigurationCommon Cathode
Diode Pair Count1 pair
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247-3L
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 1$ 6.68<4d
30$ 3.77
120$ 3.13
510$ 2.67
1020$ 2.49
2010$ 2.35

CAD

3D models and CAD resources for this part

Description

General part information

ADS065J016G3-ASATH

DIODE ARR SIC 650V 25A TO247-3L

Documents

Technical documentation and resources

No documents available