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Integrated Circuits (ICs)

K4B1G1646I-BYMA000

Active
Samsung Semiconductor, Inc.

DDR3-1866 1GB (64MX16)1.07NS CL1

Integrated Circuits (ICs)

K4B1G1646I-BYMA000

Active
Samsung Semiconductor, Inc.

DDR3-1866 1GB (64MX16)1.07NS CL1

Technical Specifications

Parameters and characteristics for this part

SpecificationK4B1G1646I-BYMA000
Clock Frequency933 MHz
Memory Depth64 M
Memory FormatDRAM
Memory Interface (Type)Parallel
Memory Size1 Gbit
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)95 °C
Operating Temperature (Min)0 °C
Package / Case96-TFBGA
Voltage - Supply1.35 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTray 224$ 3.0030d+
672$ 2.75
896$ 2.50

CAD

3D models and CAD resources for this part

Description

General part information

K4B1G1646I-BYMA000

Memory IC 1Gbit Parallel 933 MHz

Documents

Technical documentation and resources

No documents available