Discrete Semiconductor Products
TIP147TTU
ObsoleteON Semiconductor
10 A, 100 V PNP DARLINGTON BIPOLAR JUNCTION TRANSISTOR
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Discrete Semiconductor Products
TIP147TTU
ObsoleteON Semiconductor
10 A, 100 V PNP DARLINGTON BIPOLAR JUNCTION TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TIP147TTU |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 2 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 80 W |
| Supplier Device Package | TO-220-3 |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
TIP147TTU
Bipolar (BJT) Transistor PNP - Darlington 100 V 10 A 80 W Through Hole TO-220-3
Documents
Technical documentation and resources