Discrete Semiconductor Products

PJS6415_S1_00001

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20V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

20V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6415_S1_00001

Current - Continuous Drain (Id) @ 25°C	5.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds	765 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	56 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2945	$ 0.54

General part information

20V P-CHANNEL ENHANCEMENT MODE M

Technical documentation and resources