Discrete Semiconductor Products

S3M0040120N

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MOSFET SILICON CARBIDE SIC 1200V

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Discrete Semiconductor Products

Active

MOSFET SILICON CARBIDE SIC 1200V

Technical Specifications

Parameters and characteristics for this part

Specification	S3M0040120N

Current - Continuous Drain (Id) @ 25°C	65 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	143 nC
Input Capacitance (Ciss) (Max) @ Vds	2844 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	SOT-227
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	8	$ 24.50

General part information

MOSFET SILICON CARBIDE SIC 1200V

Technical documentation and resources