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BY25FQ128ELSIG(R)
Integrated Circuits (ICs)

BY25FQ128ELSIG(R)

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BYTe Semiconductor

128 MBIT, 1.8V (1.65V TO 1.95V),

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BY25FQ128ELSIG(R)
Integrated Circuits (ICs)

BY25FQ128ELSIG(R)

Active
BYTe Semiconductor

128 MBIT, 1.8V (1.65V TO 1.95V),

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBY25FQ128ELSIG(R)
Access Time6 ns
Clock Frequency133 MHz
Memory FormatFLASH
Memory InterfaceQPI, SPI - Quad I/O
Memory Organization16M x 8
Memory Size16 MB
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 C
Operating Temperature [Min]-40 ¯C
Package / Case5.3 mm, 0.209 in
Package / Case8-SOIC
Supplier Device Package8-SOP
TechnologyFLASH - NOR
Voltage - Supply [Max]2 V
Voltage - Supply [Min]1.65 V
Write Cycle Time - Word, Page [custom]120 µs
Write Cycle Time - Word, Page [custom]2.5 ms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 3990$ 0.86

Description

General part information

BY25FQ128ELSIG(R)

128 MBIT, 1.8V (1.65V TO 1.95V),

Documents

Technical documentation and resources