Coming soonZenode’s new Cross Ref’s tool! RSVP for the webinar here
Zenode.ai Logo
1N4007-T/B
Discrete Semiconductor Products

1N4007-T/B

Active
MDD

DIODE GEN PURP 1KV 1A DO41

1N4007-T/B
Discrete Semiconductor Products

1N4007-T/B

Active
MDD

DIODE GEN PURP 1KV 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification1N4007-T/B
Capacitance15 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)150 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseAxial, DO-204AL, DO-41
Package NameDO-41
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1 kV
Voltage - Forward (Vf) (Max)1 V, 1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 5000$ 0.22<4d

CAD

3D models and CAD resources for this part

Description

General part information

1N4007-T/B

Diode 1000 V 1A Through Hole DO-41

Documents

Technical documentation and resources