Discrete Semiconductor Products
VS-8ESU06HM3/I
ActiveMitsubishi Electric Europe B.V.
DIODE STANDARD 600V 8A TO277A
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DocumentsVS-8ESU06HM3/I | Datasheet
Discrete Semiconductor Products
VS-8ESU06HM3/I
ActiveMitsubishi Electric Europe B.V.
DIODE STANDARD 600V 8A TO277A
Deep-Dive with AI
DocumentsVS-8ESU06HM3/I | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-8ESU06HM3/I |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 60 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-277A (SMPC) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.36 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.30 | |
Description
General part information
VS-8ESU06HM3/I
DIODE STANDARD 600V 8A TO277A
Documents
Technical documentation and resources