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Discrete Semiconductor Products

EPC7003ASH

Active
EPC Space, LLC

GAN FET HEMT 100V 10A.045OHM 4UB

Discrete Semiconductor Products

EPC7003ASH

Active
EPC Space, LLC

GAN FET HEMT 100V 10A.045OHM 4UB

Technical Specifications

Parameters and characteristics for this part

SpecificationEPC7003ASH
Current - Continuous Drain (Id) (Tc)10 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Max)2.2 nC
Input Capacitance (Ciss) (Max)233 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case4-SMD, No Lead
Package Name4-SMD
Rds On (Max)45 mOhm
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Positive6 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 1$ 432.7630d+
10$ 416.49

CAD

3D models and CAD resources for this part

Description

General part information

EPC7003ASH

N-Channel 100 V 10A (Tc) Surface Mount 4-SMD

Documents

Technical documentation and resources