Deep-Dive with AI
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DocumentsPJT7808_R2_00001 | Datasheet
Deep-Dive with AI
DocumentsPJT7808_R2_00001 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | PJT7808_R2_00001 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 500 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 67 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-363, SC-88, 6-TSSOP |
| Power - Max [Max] | 350 mW |
| Rds On (Max) @ Id, Vgs [Max] | 400 mOhm |
| Supplier Device Package | SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
PJT7808_R2_00001
MOSFET 2N-CH 20V 0.5A SOT363
Documents
Technical documentation and resources