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PJT7808_R2_00001
Discrete Semiconductor Products

PJT7808_R2_00001

Active
EMO Inc.

MOSFET 2N-CH 20V 0.5A SOT363

PJT7808_R2_00001
Discrete Semiconductor Products

PJT7808_R2_00001

Active
EMO Inc.

MOSFET 2N-CH 20V 0.5A SOT363

Technical Specifications

Parameters and characteristics for this part

SpecificationPJT7808_R2_00001
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Ta)500 mA
Drain to Source Voltage (Vdss)20 V
Gate Charge (Max)1.4 nC, 1.4 nC
Input Capacitance (Ciss) (Max)67 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Package NameSOT-363
Power - Max (Ta)350 mW
Rds On (Max)400 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated

CAD

3D models and CAD resources for this part

Description

General part information

PJT7808_R2_00001

MOSFET 2N-CH 20V 0.5A SOT363

Documents

Technical documentation and resources