Integrated Circuits (ICs)
K4A4G085WE-BCRC
ActiveSamsung Semiconductor, Inc.
DDR4-2400 4GB (512MX8)0.833NS CL
Integrated Circuits (ICs)
K4A4G085WE-BCRC
ActiveSamsung Semiconductor, Inc.
DDR4-2400 4GB (512MX8)0.833NS CL
Technical Specifications
Parameters and characteristics for this part
| Specification | K4A4G085WE-BCRC |
|---|---|
| Memory Depth | 512 M |
| Memory Format | DRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 4 Gbit |
| Memory Type | Volatile |
| Memory Width | 8 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 95 °C |
| Operating Temperature (Min) | 0 °C |
| Package / Case | 78-FBGA |
| Voltage - Supply | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
3D models and CAD resources for this part
Description
General part information
K4A4G085WE-BCRC
Memory IC 4Gbit Parallel
Documents
Technical documentation and resources
No documents available