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IFEINFAIGW50N65F5XKSA1
Discrete Semiconductor Products

TIP35A

Obsolete
ON Semiconductor

25 A, 60 V NPN BIPOLAR POWER TRANSISTOR

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IFEINFAIGW50N65F5XKSA1
Discrete Semiconductor Products

TIP35A

Obsolete
ON Semiconductor

25 A, 60 V NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationTIP35A
Current - Collector (Ic) (Max) [Max]25 A
Current - Collector Cutoff (Max) [Max]1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]10, 25
Frequency - Transition3 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-218-3
Supplier Device PackageTO-218, SOT-93
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic4 V
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBox 325$ 0.92
N/A 0$ 0.00
0$ 0.00
623$ 1.35

Description

General part information

TIP35A

The Bipolar Power Transistor is designed for general purpose power amplifier and switching applications. The TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) are complementary devices.