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GD25B128EWIGR
Integrated Circuits (ICs)

GD25B128EWIGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 128MBIT SPI/QUAD 8WSON

GD25B128EWIGR
Integrated Circuits (ICs)

GD25B128EWIGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 128MBIT SPI/QUAD 8WSON

Technical Specifications

Parameters and characteristics for this part

SpecificationGD25B128EWIGR
Access Time7 ns
Clock Frequency133 MHz
Memory Depth16 M
Memory FormatFLASH
Memory Interface (Type)SPI - Quad I/O
Memory Size128 Mb
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case8-WDFN Exposed Pad
Package Length5 mm
Package Name8-WSON
Package Width6 mm
TechnologyFLASH - NOR (SLC)
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page2.4 ms
Write Cycle Time - Word70 µs

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 2.29<6d
10$ 2.14
25$ 2.08
50$ 2.03
100$ 1.99
250$ 1.93
500$ 1.88
1000$ 1.83
Tape & Reel (TR) 3000$ 1.76<6d

CAD

3D models and CAD resources for this part

Description

General part information

GD25B128EWIGR

IC FLASH 128MBIT SPI/QUAD 8WSON

Documents

Technical documentation and resources