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CC-C2-B15-0322
Discrete Semiconductor Products

CC-C2-B15-0322

Active
CoolCAD

SIC POWER MOSFET 1200V 12A

CC-C2-B15-0322
Discrete Semiconductor Products

CC-C2-B15-0322

Active
CoolCAD

SIC POWER MOSFET 1200V 12A

Technical Specifications

Parameters and characteristics for this part

SpecificationCC-C2-B15-0322
Current - Continuous Drain (Id) (Ta)12 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)40 nC
Input Capacitance (Ciss) (Max)1810 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-247-4
Package NameTO-247
Power Dissipation (Max)100 W
Rds On (Max)135 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-5 V
Vgs (Max) Positive15 V
Vgs(th) (Max)3.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 5$ 7.00<4d
10$ 6.00
100$ 5.50

CAD

3D models and CAD resources for this part

Description

General part information

CC-C2-B15-0322

N-Channel 1200 V 12A (Ta) 100W (Tc) Through Hole TO-247

Documents

Technical documentation and resources