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1ED21271S65FXUMA1
Integrated Circuits (ICs)

1ED21271S65FXUMA1

Active
INFINEON

1ED21271S65FXUMA1

1ED21271S65FXUMA1
Integrated Circuits (ICs)

1ED21271S65FXUMA1

Active
INFINEON

1ED21271S65FXUMA1

Technical Specifications

Parameters and characteristics for this part

Specification1ED21271S65FXUMA1
Channel TypeSingle
Current - Peak Output (Sink)4 A
Current - Peak Output (Source)4 A
Driven ConfigurationHigh-Side
Fall Time (Typ)12 ns
Gate TypeSiC MOSFET
High Side Voltage - Max (Bootstrap)650 V
Input TypeNon-Inverting
Logic Voltage - VIH2.4 V
Logic Voltage - VIL0.8 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package Length0.154 in
Package NamePG-DSO-8, 8-SOIC
Package Width3.9 mm
Rise Time (Typ)12 ns
Voltage - Supply (Maximum)22 V
Voltage - Supply (Minimum)7.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 1.50<5d
10$ 1.09
25$ 0.99
100$ 0.88
250$ 0.83
500$ 0.79
1000$ 0.79
Tape & Reel (TR) 2500$ 0.74<5d
5000$ 0.72
7500$ 0.71
12500$ 0.71

CAD

3D models and CAD resources for this part

Description

General part information

1ED21271S65FXUMA1

EiceDRIVER™ 650 V high side single channelgate driver ICwith a typical 4 A source and 4 A sink current in DSO-8 package forIGBTs,MOSFETsandSiC MOSFETs.

Documents

Technical documentation and resources