Discrete Semiconductor Products

GSFD4010

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MOSFET, N-CH, SINGLE, 60.00A, 40

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Discrete Semiconductor Products

Active

MOSFET, N-CH, SINGLE, 60.00A, 40

Technical Specifications

Parameters and characteristics for this part

Specification	GSFD4010

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	62 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4720	$ 0.61

General part information

MOSFET, N-CH, SINGLE, 60.00A, 40

Technical documentation and resources