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2N5320 TIN/LEAD
Discrete Semiconductor Products

2N5320 TIN/LEAD

Active
Central Semiconductor Corp

75V 2A 10W TH TRANSISTOR-BIPOLAR

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2N5320 TIN/LEAD
Discrete Semiconductor Products

2N5320 TIN/LEAD

Active
Central Semiconductor Corp

75V 2A 10W TH TRANSISTOR-BIPOLAR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N5320 TIN/LEAD
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]500 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]30
Frequency - Transition50 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]200 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]10 W
Supplier Device PackageTO-39
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.84

Description

General part information

2N5320 TIN/LEAD

75V 2A 10W TH TRANSISTOR-BIPOLAR

Documents

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