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ICE20N60FP
Discrete Semiconductor Products

ICE20N60FP

Active
IceMOS Technology

SUPERJUNCTION MOSFET

ICE20N60FP
Discrete Semiconductor Products

ICE20N60FP

Active
IceMOS Technology

SUPERJUNCTION MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationICE20N60FP
Current - Continuous Drain (Id) (Tc)20 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)59 nC
Input Capacitance (Ciss) (Max)2064 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack, Isolated Tab
Package NameTO-220FP
Power Dissipation (Max)35 W
Rds On (Max)190 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 50$ 2.47<4d
250$ 2.31
500$ 2.12
1000$ 1.95

CAD

3D models and CAD resources for this part

Description

General part information

ICE20N60FP

SUPERJUNCTION MOSFET

Documents

Technical documentation and resources