Zenode.ai Logo
Beta
ICE20N60FP
Discrete Semiconductor Products

ICE20N60FP

Active
IceMOS Technology

SUPERJUNCTION MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

ICE20N60FP
Discrete Semiconductor Products

ICE20N60FP

Active
IceMOS Technology

SUPERJUNCTION MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationICE20N60FP
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs59 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2064 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)35 W
Rds On (Max) @ Id, Vgs190 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

ICE20N60FP

SUPERJUNCTION MOSFET

Documents

Technical documentation and resources