Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | CPH6411-TL-E |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Rds On (Max) @ Id, Vgs | 20 mOhm |
| Supplier Device Package | 6-CPH |
| Technology | MOSFET (Metal Oxide) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 24000 | $ 0.45 | |
Description
General part information
CPH6411-TL-E
N-CHANNL SILICON MOSFET FOR ULTR
Documents
Technical documentation and resources
No documents available