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ADS065J020H3-ASATH
Discrete Semiconductor Products

ADS065J020H3-ASATH

Active
Sanan Power Semiconductor

DIODE SIL CARB 650V 51A TO2472L

ADS065J020H3-ASATH
Discrete Semiconductor Products

ADS065J020H3-ASATH

Active
Sanan Power Semiconductor

DIODE SIL CARB 650V 51A TO2472L

Technical Specifications

Parameters and characteristics for this part

SpecificationADS065J020H3-ASATH
Capacitance1018 pF
Current - Average Rectified (Io)51 A
Current - Reverse Leakage40 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-2
Package NameTO-247-2L
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 1$ 7.66<4d
30$ 4.37
120$ 3.65
510$ 3.12
1020$ 2.93
2010$ 2.77

CAD

3D models and CAD resources for this part

Description

General part information

ADS065J020H3-ASATH

DIODE SIL CARB 650V 51A TO2472L

Documents

Technical documentation and resources

No documents available