Discrete Semiconductor Products
IGN1011L70
ActiveIntegra Technologies Inc.
RF MOSFET GAN HEMT 50V PL32A2
Discrete Semiconductor Products
IGN1011L70
ActiveIntegra Technologies Inc.
RF MOSFET GAN HEMT 50V PL32A2
Technical Specifications
Parameters and characteristics for this part
| Specification | IGN1011L70 |
|---|---|
| Current - Test | 22 mA |
| Frequency (Max) | 1.09 GHz |
| Frequency (Min) | 1.03 GHz |
| Gain | 22 dB |
| Mounting Type | Chassis Mount |
| Package / Case | PL32A2 |
| Package Name | PL32A2 |
| Power - Output | 80 W |
| Technology | GaN HEMT |
| Voltage - Rated | 120 VDC |
| Voltage - Test | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 190.69 | 30d+ |
| 15 | $ 185.00 | |||
CAD
3D models and CAD resources for this part
Description
General part information
IGN1011L70
RF Mosfet 50 V 22 mA 1.03GHz ~ 1.09GHz 22dB 80W PL32A2
Documents
Technical documentation and resources
No documents available