Technical Specifications
Parameters and characteristics for this part
| Specification | AC2M0013120K |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 167 A |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4 |
| Power Dissipation (Max) | 555 W |
| Rds On (Max) | 13 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 2.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.35 | <4d |
| 10 | $ 5.08 | |||
| 60 | $ 4.86 | |||
| 240 | $ 4.62 | |||
| 450 | $ 4.16 | |||
| 900 | $ 3.75 | |||
| 1000 | $ 3.35 | |||
| 5000 | $ 3.06 | |||
| 10000 | $ 2.78 | |||
CAD
3D models and CAD resources for this part
Description
General part information
AC2M0013120K
SIC MOSFET N-CH 1200V 167A TO247
Documents
Technical documentation and resources
No documents available