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1N60L
Discrete Semiconductor Products

1N60L

Active
UMW

TO-252 N-CHANNEL POWER MOSFET

1N60L
Discrete Semiconductor Products

1N60L

Active
UMW

TO-252 N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification1N60L
Current - Continuous Drain (Id) (Tj)1 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)4.8 nC
Input Capacitance (Ciss) (Max)150 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252 (DPAK)
Rds On (Max)11 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 0.51<4d
10$ 0.36
25$ 0.32
100$ 0.28
250$ 0.26
500$ 0.25
1000$ 0.24
Tape & Reel (TR) 2500$ 0.23<4d
5000$ 0.22
7500$ 0.22
12500$ 0.21
17500$ 0.21
25000$ 0.21

CAD

3D models and CAD resources for this part

Description

General part information

1N60L

N-Channel 600 V 1A (Tj) Surface Mount TO-252 (DPAK)

Documents

Technical documentation and resources