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IS25WE512M-RMLE-TY
Integrated Circuits (ICs)

IS25WE512M-RMLE-TY

Active
Nearson Inc.

IC FLASH 512MB 1.8V SPI 16SOIC

IS25WE512M-RMLE-TY
Integrated Circuits (ICs)

IS25WE512M-RMLE-TY

Active
Nearson Inc.

IC FLASH 512MB 1.8V SPI 16SOIC

Technical Specifications

Parameters and characteristics for this part

SpecificationIS25WE512M-RMLE-TY
Clock Frequency112 MHz
Memory Depth64 M
Memory FormatFLASH
Memory Interface (Type)SPI - Quad I/O, QPI, DTR
Memory Size512 Mb
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)105 °C
Operating Temperature (Min)-40 °C
Package Length0.295 in
Package Name16-SOIC
Package Width7.5 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)1.95 V
Voltage - Supply (Minimum)1.7 V
Write Cycle Time - Page1 ms
Write Cycle Time - Word50 µs

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTray 176$ 13.90<5d

CAD

3D models and CAD resources for this part

Description

General part information

IS25WE512M-RMLE-TY

FLASH - NOR Memory IC 512Mbit SPI - Quad I/O, QPI, DTR 112 MHz 16-SOIC

Documents

Technical documentation and resources

No documents available