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2N60G
Discrete Semiconductor Products

2N60G

Active
UMW

MOSFET N-CH 600V 2A SOT223

2N60G
Discrete Semiconductor Products

2N60G

Active
UMW

MOSFET N-CH 600V 2A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification2N60G
Current - Continuous Drain (Id) (Tc)2 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Mounting TypeSurface Mount
Operating Temperature (Max)155 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223-4
Power Dissipation (Max)44 W
Rds On (Max)4.5 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 0.76<4d
10$ 0.47
100$ 0.30
500$ 0.23
1000$ 0.21
Tape & Reel (TR) 2500$ 0.18<4d
5000$ 0.17
7500$ 0.16
12500$ 0.15
17500$ 0.14
25000$ 0.14

CAD

3D models and CAD resources for this part

Description

General part information

2N60G

MOSFET N-CH 600V 2A SOT223

Documents

Technical documentation and resources