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2N5116 TO-18 3L ROHS
Discrete Semiconductor Products

2N5116 TO-18 3L ROHS

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2N5116 TO-18 3L ROHS
Discrete Semiconductor Products

2N5116 TO-18 3L ROHS

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N5116 TO-18 3L ROHS
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]25 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-206AA, TO-18-3 Metal Can
Power - Max [Max]500 mW
Resistance - RDS(On)150 Ohms
Supplier Device PackageTO-18-3
Voltage - Breakdown (V(BR)GSS)30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 35$ 8.19

Description

General part information

2N5116 TO-18 3L ROHS

JFET P-CH 30V TO18-3

Documents

Technical documentation and resources