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TO-218
Discrete Semiconductor Products

TIP33C

Obsolete
ON Semiconductor

HIGH POWER NPN BIPOLAR POWER TRANSISTOR

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TO-218
Discrete Semiconductor Products

TIP33C

Obsolete
ON Semiconductor

HIGH POWER NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationTIP33C
Current - Collector Cutoff (Max) [Max]700 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20
Frequency - Transition3 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-218-3
Power - Max [Max]80 W
Supplier Device PackageSOT-93
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic4 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
0$ 0.00
0$ 0.00

Description

General part information

TIP33C

The Bipolar Power Transistor is designed for general-purpose power amplifier and switching applications