Discrete Semiconductor Products

RM12N650T2

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MOSFET N-CH 650V 11.5A TO220-3

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Discrete Semiconductor Products

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MOSFET N-CH 650V 11.5A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	RM12N650T2

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	101 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2000	$ 1.45

General part information

MOSFET N-CH 650V 11.5A TO220-3

Technical documentation and resources