Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | WI62195 |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 53.5 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 14-PowerLDFN |
| Rds On (Max) @ Id, Vgs [Max] | 250 mOhm |
| Supplier Device Package | 14 |
| Supplier Device Package | PQFN, 6x8 |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 1.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 3.00 | |
Description
General part information
WI62195
MOSFET 2N-CH 750V 9A 14PQFN
Documents
Technical documentation and resources
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