Discrete Semiconductor Products

AOT66518L

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MOSFET N-CH 150V 30A/120A TO220

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Discrete Semiconductor Products

Active

MOSFET N-CH 150V 30A/120A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT66518L

Current - Continuous Drain (Id) @ 25°C	120 A, 30 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	115 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6460 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	375 W, 10 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	811	$ 7.98

General part information

MOSFET N-CH 150V 30A/120A TO220

Technical documentation and resources