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MDD80N03D
Discrete Semiconductor Products

MDD80N03D

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MDD

MOSFET N 30V 80A TO252

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MDD80N03D
Discrete Semiconductor Products

MDD80N03D

Active
MDD

MOSFET N 30V 80A TO252

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMDD80N03D
Current - Continuous Drain (Id) @ 25°C80 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs54 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2504 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]44 W
Rds On (Max) @ Id, Vgs6 mOhm
Supplier Device PackageTO-252
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2500$ 0.47

Description

General part information

MDD80N03D

MOSFET N 30V 80A TO252

Documents

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