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DO-35
Discrete Semiconductor Products

1N914B_T50R

Obsolete
ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

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DO-35
Discrete Semiconductor Products

1N914B_T50R

Obsolete
ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1N914B_T50R
Capacitance @ Vr, F4 pF
Current - Average Rectified (Io)200 mA
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-204AH, Axial, DO-35
Reverse Recovery Time (trr)4 ns
Speed200 mA
SpeedAny Speed
Supplier Device PackageDO-35
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.01

Description

General part information

1N914B_T50R

Diode 100 V 200mA Through Hole DO-35

Documents

Technical documentation and resources