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AO6602G
Discrete Semiconductor Products

AO6602G

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Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 3.5A 6TSOP

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AO6602G
Discrete Semiconductor Products

AO6602G

Active
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 3.5A 6TSOP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAO6602G
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C3.5 A, 2.7 A
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs4.05 nC
Input Capacitance (Ciss) (Max) @ Vds210 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-457, SC-74
Power - Max [Max]1.15 W
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.18

Description

General part information

AO6602G

MOSFET N/P-CH 30V 3.5A 6TSOP

Documents

Technical documentation and resources