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BY25D10ASOIG(R)
Integrated Circuits (ICs)

BY25D10ASOIG(R)

Active
BYTe Semiconductor

1 MBIT, 3.0V (2.7V TO 3.6V), -40

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BY25D10ASOIG(R)
Integrated Circuits (ICs)

BY25D10ASOIG(R)

Active
BYTe Semiconductor

1 MBIT, 3.0V (2.7V TO 3.6V), -40

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBY25D10ASOIG(R)
Access Time7 ns
Clock Frequency108 MHz
Memory Depth128 K
Memory FormatFLASH
Memory Interface (Type)SPI - Dual I/O
Memory Size1 Mbit
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length0.173 in
Package Name8-TSSOP
Package Width4.4 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page2.4 ms
Write Cycle Time - Word2.4 ms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.151m+

CAD

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Description

General part information

BY25D10ASOIG(R)

1 MBIT, 3.0V (2.7V TO 3.6V), -40

Documents

Technical documentation and resources