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LA NI10WP4
Optoelectronics

LA NI10WP4

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LED CHIP NEAR INFRARED

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LA NI10WP4
Optoelectronics

LA NI10WP4

Active
Light-Avenue

LED CHIP NEAR INFRARED

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationLA NI10WP4
Current - DC Forward (If) (Max)50 mA
Operating Temperature [Max]100 °C
Operating Temperature [Min]-40 C
Package / CaseDie
Radiant Intensity (Ie) Min @ If [Min]8.4 mW/sr
TypeInfrared (IR)
Voltage - Forward (Vf) (Typ)1.55 V
Wavelength850 nm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 100$ 6.83

Description

General part information

LA NI10WP4

LED CHIP NEAR INFRARED

Documents

Technical documentation and resources

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