Technical Specifications
Parameters and characteristics for this part
| Specification | 10N65F |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 10 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 19 nC |
| Input Capacitance (Ciss) (Max) | 1037 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Package Name | ITO-220AB |
| Power Dissipation (Max) | 50 W, 32.1 W |
| Rds On (Max) | 1.2 Ohm, 900 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.62 | <4d |
| 50 | $ 0.77 | |||
| 100 | $ 0.68 | |||
| 500 | $ 0.53 | |||
| 1000 | $ 0.49 | |||
| 2000 | $ 0.45 | |||
| 5000 | $ 0.40 | |||
| 10000 | $ 0.38 | |||
CAD
3D models and CAD resources for this part
Description
General part information
10N65F
N-Channel 650 V 10A (Tc) 32.1W (Tc) Through Hole ITO-220AB
Documents
Technical documentation and resources