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ADS120J020H3-ASATH
Discrete Semiconductor Products

ADS120J020H3-ASATH

Active
Sanan Power Semiconductor

DIODE SIL CARB 1200V 63A TO2472L

ADS120J020H3-ASATH
Discrete Semiconductor Products

ADS120J020H3-ASATH

Active
Sanan Power Semiconductor

DIODE SIL CARB 1200V 63A TO2472L

Technical Specifications

Parameters and characteristics for this part

SpecificationADS120J020H3-ASATH
Capacitance1565 pF
Current - Average Rectified (Io)63 A
Current - Reverse Leakage60 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-2
Package NameTO-247-2L
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 1$ 11.79<4d
30$ 6.98
120$ 5.93
510$ 5.15
1020$ 4.87
2010$ 4.64

CAD

3D models and CAD resources for this part

Description

General part information

ADS120J020H3-ASATH

DIODE SIL CARB 1200V 63A TO2472L

Documents

Technical documentation and resources

No documents available