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ALD1101BPAL
Discrete Semiconductor Products

ALD1101BPAL

Active
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8PDIP

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ALD1101BPAL
Discrete Semiconductor Products

ALD1101BPAL

Active
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8PDIP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationALD1101BPAL
Channel Count2
ConfigurationMatched Pair, N-Channel
Configuration - FeaturesDual
Drain to Source Voltage (Vdss)10.6 V
Mounting TypeThrough Hole
Operating Temperature (Max)70 °C
Operating Temperature (Min)0 °C
Package Length0.3 in
Package Name8-PDIP, 8-DIP
Package Width7.62 mm
Power - Max0.5 W
Rds On (Max)75 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 6.511m+

CAD

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Description

General part information

ALD1101BPAL

MOSFET 2N-CH 10.6V 8PDIP

Documents

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