Discrete Semiconductor Products
ALD1101BPAL
ActiveAdvanced Linear Devices Inc.
MOSFET 2N-CH 10.6V 8PDIP
Discrete Semiconductor Products
ALD1101BPAL
ActiveAdvanced Linear Devices Inc.
MOSFET 2N-CH 10.6V 8PDIP
Technical Specifications
Parameters and characteristics for this part
| Specification | ALD1101BPAL |
|---|---|
| Channel Count | 2 |
| Configuration | Matched Pair, N-Channel |
| Configuration - Features | Dual |
| Drain to Source Voltage (Vdss) | 10.6 V |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 70 °C |
| Operating Temperature (Min) | 0 °C |
| Package Length | 0.3 in |
| Package Name | 8-PDIP, 8-DIP |
| Package Width | 7.62 mm |
| Power - Max | 0.5 W |
| Rds On (Max) | 75 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 50 | $ 7.07 | <4d |
CAD
3D models and CAD resources for this part
Description
General part information
ALD1101BPAL
MOSFET 2N-CH 10.6V 8PDIP
Documents
Technical documentation and resources