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BAV70-HE3_A-08
Discrete Semiconductor Products

BAV70-HE3_A-08

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Mitsubishi Electric Europe B.V.

DIODE ARRAY GP 70V 350MA SOT23-3

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BAV70-HE3_A-08
Discrete Semiconductor Products

BAV70-HE3_A-08

Active
Mitsubishi Electric Europe B.V.

DIODE ARRAY GP 70V 350MA SOT23-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBAV70-HE3_A-08
Current - Average Rectified (Io) (per Diode)350 mA
Current - Reverse Leakage @ Vr100 nA
Diode Configuration1 Pair Common Cathode
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction150 ¯C
Package / CaseSOT-23-3, TO-236-3, SC-59
QualificationAEC-Q101
Reverse Recovery Time (trr)6 ns
Speed500 ns, 200 mA
Supplier Device PackageSOT-23-3
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]70 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 13654$ 0.27

Description

General part information

BAV70-HE3_A-08

DIODE ARRAY GP 70V 350MA SOT23-3

Documents

Technical documentation and resources