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PJQ4448P_R2_00001
Discrete Semiconductor Products

PJQ4448P_R2_00001

Active
Panjit International Inc.

MOSFETS 40V N-CHANNEL ENHANCEMENT MODE MOSFET

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PJQ4448P_R2_00001
Discrete Semiconductor Products

PJQ4448P_R2_00001

Active
Panjit International Inc.

MOSFETS 40V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPJQ4448P_R2_00001
Current - Continuous Drain (Id) @ 25°C42 A, 10 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds1040 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)2 W, 35 W
Rds On (Max) @ Id, Vgs11 mOhm
Supplier Device PackageDFN3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2331$ 0.77
MouserN/A 1$ 0.66
10$ 0.45
100$ 0.31
500$ 0.24
1000$ 0.19
5000$ 0.17
10000$ 0.15
25000$ 0.14

Description

General part information

PJQ4448P_R2_00001

MOSFETS 40V N-CHANNEL ENHANCEMENT MODE MOSFET

Documents

Technical documentation and resources

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