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WI71060TR
Discrete Semiconductor Products

WI71060TR

Active
Wise-Integration

POWER GAN IC DISCRETE 8X8 PDFN

WI71060TR
Discrete Semiconductor Products

WI71060TR

Active
Wise-Integration

POWER GAN IC DISCRETE 8X8 PDFN

Technical Specifications

Parameters and characteristics for this part

SpecificationWI71060TR
Current - Continuous Drain (Id) (Tj)30 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)6 V
FET TypeN-Channel
Gate Charge (Max)7 nC
Input Capacitance (Ciss) (Max)216 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / Case8-LDFN Exposed Pad
Package Length8 mm
Package Name8-PDFN
Package Width8 mm
Rds On (Max)65 mOhm
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Positive6 V
Vgs(th) (Max)1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 7.27<4d
10$ 5.60
25$ 5.19
100$ 4.73
250$ 4.59
Tape & Reel (TR) 2500$ 4.16<4d

CAD

3D models and CAD resources for this part

Description

General part information

WI71060TR

POWER GAN IC DISCRETE 8X8 PDFN

Documents

Technical documentation and resources