Discrete Semiconductor Products

WI71060TR

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POWER GAN IC DISCRETE 8X8 PDFN

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Discrete Semiconductor Products

Active

POWER GAN IC DISCRETE 8X8 PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	WI71060TR

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	216 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-LDFN Exposed Pad
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	8-PDFN (8x8)
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2498	$ 7.06

General part information

POWER GAN IC DISCRETE 8X8 PDFN

Technical documentation and resources