Integrated Circuits (ICs)
K4F8E304HB-MGCJ
ActiveSamsung Semiconductor, Inc.
LPDDR4 8GB X32 3733 MBPS 1.1V 20
Integrated Circuits (ICs)
K4F8E304HB-MGCJ
ActiveSamsung Semiconductor, Inc.
LPDDR4 8GB X32 3733 MBPS 1.1V 20
Technical Specifications
Parameters and characteristics for this part
| Specification | K4F8E304HB-MGCJ |
|---|---|
| Clock Frequency | 1866 MHz |
| Memory Depth | 256 M |
| Memory Format | DRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 1 GB |
| Memory Type | Volatile |
| Memory Width | 32 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -25 °C |
| Package / Case | 200-TFBGA |
| Voltage - Supply | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
3D models and CAD resources for this part
Description
General part information
K4F8E304HB-MGCJ
Memory IC 8Gbit Parallel 1866 MHz
Documents
Technical documentation and resources
No documents available