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MR756
Discrete Semiconductor Products

MR756

Active
Solid State Inc.

DIODE GEN PURP 600V 6A

MR756
Discrete Semiconductor Products

MR756

Active
Solid State Inc.

DIODE GEN PURP 600V 6A

Technical Specifications

Parameters and characteristics for this part

SpecificationMR756
Current - Average Rectified (Io)6 A
Current - Reverse Leakage25 µA
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-65 °C
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max)900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated

CAD

3D models and CAD resources for this part

Description

General part information

MR756

Diode 600 V 6A

Documents

Technical documentation and resources

No documents available